METHOD FOR FORMING SILICON OXIDE LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide layer in the manufacture of a polysilicon thin film transistor. SOLUTION: After an amorphous silicon layer is formed on a supplied substrate, a surface treatment using an oxygen-containing plasma is performed on the substrate. Thus, part of the amorphous silicon layer is changed to a surface oxide layer. COPYRIGHT: (C)2005,JPO&NCIPI