| 摘要 |
PROBLEM TO BE SOLVED: To form a solid state imaging device with good productivity employing a charge transmission electrode of single layer structure which is capable of narrowing a gap and which is provided with high speed and highly accurate charge transmission characteristics. SOLUTION: The solid state imaging device is equipped with a photoelectric conversion unit, and a charge transmission unit provided with the charge transmission electrode of single layer structure for transmitting a charge generated in the photoelectric conversion unit. In the manufacturing method thereof, the forming process of the charge transmission electrode comprises a process for forming a conductive film on the surface of a semiconductor substrate provided with a gate oxide film formed thereon, a process for forming a mask pattern on the conductive film, a process for forming an opening which becomes an inter-electrode region on the conductive film utilizing the mask pattern as a mask, and a process for forming an insulating film 4 by reduced CVD method to fill the inter-electrode region. COPYRIGHT: (C)2005,JPO&NCIPI
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