BISMUTH SUBSTITUTION TYPE MAGNETIC GARNET FILM AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a bismuth substitution type magnetic garnet film having a high extinction ratio which is grown by a liquid phase epitaxial method, and to provide a method for manufacturing the same by which the film can be obtained with a high yield. SOLUTION: In the method for manufacturing the bismuth substitution type magnetic garnet film by the liquid phase epitaxial method using a non-magnetic garnet substrate, YbTbBiFe-based magnetic garnet film or the like having a thickness of≥1,000μm is manufactured. In the bismuth substitution type magnetic garnet films such as the YbTbBiFe-based magnetic garnet film manufactured by the method, the difference between lattice constants at the surface and the rear surface is≤0.0002 nm and the extinction ratio is≥45 dB. COPYRIGHT: (C)2005,JPO&NCIPI