发明名称 |
Base method treating method and electron device-use material |
摘要 |
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.
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申请公布号 |
US2004235311(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040485410 |
申请日期 |
2004.01.30 |
申请人 |
NAKANISHI TOSHIO;SUGAWARA TAKUYA;MOTONYAMA SEIJI;SASAKI MASARU |
发明人 |
NAKANISHI TOSHIO;SUGAWARA TAKUYA;MOTONYAMA SEIJI;SASAKI MASARU |
分类号 |
H01L21/223;H01L21/28;H01L21/30;H01L21/314;H01L21/318;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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