发明名称 Memory integrated circuit including an error detection mechanism for detecting errors in address and control signals
摘要 A memory integrated circuit including an error detection mechanism for detecting errors in address and control signals. The memory integrated circuit includes a memory array including a plurality of memory cells configured to store data. The memory integrated circuit also includes an address logic unit coupled to the memory array which may be configured to receive a plurality of memory requests each including address information and corresponding error detection information. The corresponding error detection information may be dependent upon the address information. The memory integrated circuit further includes error detection logic which is coupled to the address logic and may be configured to detect an error in the address information based upon the corresponding error detection information and may provide an error indication in response to detecting the error.
申请公布号 US2004237001(A1) 申请公布日期 2004.11.25
申请号 US20030442842 申请日期 2003.05.21
申请人 SUN MICROSYSTEMS, INC. 发明人 SCHULZ JURGEN M.;WU CHUNG-HSIAO R.
分类号 G06F11/10;H04B1/74;(IPC1-7):H04B1/74 主分类号 G06F11/10
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