发明名称 Semiconductor device and manufacturing method thereof
摘要 A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.
申请公布号 US2004232549(A1) 申请公布日期 2004.11.25
申请号 US20040878206 申请日期 2004.06.29
申请人 FUJITSU LIMITED 发明人 SAITO NOBUKATSU;MINAMIZAWA MASAHARU;YONEDA YOSHIYUKI;SHIMIZU NOBUTAKA;IMAMURA KAZUYUKI;KIKUCHI ATSUSHI;OKAMOTO TADAHIRO;WATANABE EIJI
分类号 H01L21/48;H01L21/56;H01L21/68;H01L21/98;H01L23/31;H01L23/498;H01L25/065;(IPC1-7):H01L23/48 主分类号 H01L21/48
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