发明名称 |
Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon |
摘要 |
A method of fabricating polycrystalline silicon includes: forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.
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申请公布号 |
US2004235279(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040848048 |
申请日期 |
2004.05.19 |
申请人 |
KIM YOUNG-JOO |
发明人 |
KIM YOUNG-JOO |
分类号 |
G02F1/1368;C30B28/10;C30B29/06;G02F1/13;G02F1/136;G03F7/00;H01L21/00;H01L21/027;H01L21/20;H01L21/268;H01L21/306;H01L21/324;H01L21/336;H01L21/77;H01L21/84;H01L23/544;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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