RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR
摘要
An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
申请公布号
WO2004102638(A2)
申请公布日期
2004.11.25
申请号
WO2004US13707
申请日期
2004.04.29
申请人
LAM RESEARCH CORPORATION;LOEWENHARDT, PETER;SRINIVASAN, MUKUND;FISCHER, ANDREAS
发明人
LOEWENHARDT, PETER;SRINIVASAN, MUKUND;FISCHER, ANDREAS