| 摘要 |
A metallising process, esp. alloying, for a semiconductor (1) comprises applying a first metal (2), a barrier (5) and a second metal (4), the barrier comprising TiWN. The second metal is a eutecticum, e.g. Au-Ge. Application of the barrier and of the second metal occurs in one-step, pref. application of first and second metals and barrier occurs in one step. An adhesive agent (6), e.g. Ti, can be applied between the barrier and the second metal. USE/ADVANTAGE - For semiconductor chips, esp. III-V semiconductors and those used in optoelectronics, e.g. IRED's. The process is simple and economical. |
