SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To electrically connect the dopant layer of a high concentration formed at a prescribed depth of a wafer to an electrode formed on the principal plane of the wafer without forming any trenches or through-holes in the semiconductor wafer.

SOLUTION: An n++diffusion layer 3 is formed by ion implantation or diffuison method in the dicing region of the semiconductor wafer 1, in such a manner that it may reach an n++layer 11 formed in a deep place of the semiconductor wafer 1 from the front surface of the wafer. The width of the n++diffusion region 3 is made wider than a blade width of a dicer so that the n++diffusion region 3 may be left over on the peripheral edge of each chip divided by dicing. A bump electrode 61 electrically connected to the n++layer 11 via the n++diffusion layer 3 is formed on the front surface of the wafer, and then dicing is carried out.

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