| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element which has excellent light emitting characteristics and in which a manufacturing yield is high and reliability is high, and to provide a method for processing the same. <P>SOLUTION: An n-type ZnO buffer layer 102, an n-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O clad layer 103, an n-type ZnO light guide layer 104, a quantum well active layer 105, a p-type ZnO light guide layer 106, a p-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O first clad layer 107, an MG<SB>0.15</SB>Zn<SB>0.85</SB>O etching stop layer 108, a p-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O clad layer 109, and a p-type ZnO contact layer 110, are sequentially laminated in this order on an n-type ZnO single crystal substrate 101. The MG<SB>0.15</SB>Zn<SB>0.85</SB>O etching stop layer 108 is doped with N as an acceptor impurity in the concentration of 5×10<SP>19</SP>cm<SP>-3</SP>, and is doped with Ga as a donor impurity in the concentration of 1×10<SP>17</SP>cm<SP>-3</SP>. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
