发明名称 METHOD OF OPTICAL PROXIMITY EFFECT CORRECTION
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of proper optical proximity effect correction for an entire circuit pattern in which exposure deviation caused by inhomogeneous pattern density in a local region of a photomask is not taken into consideration. <P>SOLUTION: A circuit pattern to be transferred onto a substrate is corrected by using a computer system, and a plurality of dummy patterns not to be developed is formed in a vacant region except the circuit pattern. The circuit pattern and the dummy pattern not to be developed are produced together on the top face of a substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004334065(A) 申请公布日期 2004.11.25
申请号 JP20030132557 申请日期 2003.05.12
申请人 UNITED MICROELECTRONICS CORP 发明人 KO SHUNJIN;KO ZUITEI;SHA SHOSHI
分类号 G03F1/28;G03F1/36;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/28
代理机构 代理人
主权项
地址