发明名称 |
METHOD OF OPTICAL PROXIMITY EFFECT CORRECTION |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of proper optical proximity effect correction for an entire circuit pattern in which exposure deviation caused by inhomogeneous pattern density in a local region of a photomask is not taken into consideration. <P>SOLUTION: A circuit pattern to be transferred onto a substrate is corrected by using a computer system, and a plurality of dummy patterns not to be developed is formed in a vacant region except the circuit pattern. The circuit pattern and the dummy pattern not to be developed are produced together on the top face of a substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004334065(A) |
申请公布日期 |
2004.11.25 |
申请号 |
JP20030132557 |
申请日期 |
2003.05.12 |
申请人 |
UNITED MICROELECTRONICS CORP |
发明人 |
KO SHUNJIN;KO ZUITEI;SHA SHOSHI |
分类号 |
G03F1/28;G03F1/36;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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