发明名称 MANUFACTURING METHOD OF CARBON NANOTUBE FIELD EMISSION TRANSISTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a carbon nanotube field emission transistor. <P>SOLUTION: The number of exposure of carbon nanotubes on a unit electrode pixel is increased by performing a casting surface treatment onto a carbon nanotube electron source in a triple electrode structure of a carbon nanotube field emission display. Then, a current density and a current strength of a field emission of an electron source field emission material are increased. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004335435(A) 申请公布日期 2004.11.25
申请号 JP20030207333 申请日期 2003.08.12
申请人 IND TECHNOL RES INST 发明人 KYO SHIEI;LEE CHUN-TAO;RI SEICHU;KA KAJU;CHO YUYO
分类号 H01J9/02;B05D3/12;H01J1/304;H01J21/06;H01J31/12;(IPC1-7):H01J9/02 主分类号 H01J9/02
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