发明名称 |
MANUFACTURING METHOD OF CARBON NANOTUBE FIELD EMISSION TRANSISTOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a carbon nanotube field emission transistor. <P>SOLUTION: The number of exposure of carbon nanotubes on a unit electrode pixel is increased by performing a casting surface treatment onto a carbon nanotube electron source in a triple electrode structure of a carbon nanotube field emission display. Then, a current density and a current strength of a field emission of an electron source field emission material are increased. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004335435(A) |
申请公布日期 |
2004.11.25 |
申请号 |
JP20030207333 |
申请日期 |
2003.08.12 |
申请人 |
IND TECHNOL RES INST |
发明人 |
KYO SHIEI;LEE CHUN-TAO;RI SEICHU;KA KAJU;CHO YUYO |
分类号 |
H01J9/02;B05D3/12;H01J1/304;H01J21/06;H01J31/12;(IPC1-7):H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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