| 摘要 |
PROBLEM TO BE SOLVED: To provide a method through which a compound single crystal with a lower plane defect density can be obtained, which is a method to manufacture compound semiconductor single crystals such as silicon carbide, gallium nitride, etc. by using the epitaxial growth method. SOLUTION: Onto the surface of a single crystal substrate, two or more layers of a compound single crystal layer that is the same as, or different from, this substrate are grown in sequence through the epitaxial method. At least, part of the substrate's surface has multiple undulations extending in one direction, and the epitaxial growth at and after the second time is performed after forming multiple undulations extending in one direction onto at least part of the surface of a compound single crystal layer formed immediately before. COPYRIGHT: (C)2005,JPO&NCIPI
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