发明名称 Input/output byte control device using nonvolatile ferroelectric register
摘要 An input/output byte control device using a nonvolatile ferroelectric register can maintain compatibility with various memories by selectively controlling bytes of input/output data. Since bytes of input/output data are selectively activated, the compatibility can be maintained with SRAM (Static Random Access Memory) having wide bytes and flash memory having fixed input/output bytes. Additionally, programs can be changed in a software system using a nonvolatile ferroelectric register.
申请公布号 US2004236872(A1) 申请公布日期 2004.11.25
申请号 US20030738088 申请日期 2003.12.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK
分类号 G11C11/412;G06F3/00;G11C7/10;G11C11/22;(IPC1-7):G06F3/00 主分类号 G11C11/412
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