发明名称 Semiconductor device and method for manufacturing same
摘要 Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.
申请公布号 US2004235275(A1) 申请公布日期 2004.11.25
申请号 US20040882790 申请日期 2004.07.01
申请人 发明人 YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI
分类号 G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/36;H01L21/20 主分类号 G02F1/136
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