发明名称 |
Semiconductor device and method for manufacturing same |
摘要 |
Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.
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申请公布号 |
US2004235275(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040882790 |
申请日期 |
2004.07.01 |
申请人 |
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发明人 |
YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/36;H01L21/20 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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