Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers

摘要

One aspect of this disclosure relates to a method for creating proximity gettering sites in a silicon on insulator (SOI) wafer. In various embodiments of this method, a relaxed silicon germanium region is formed over an insulator region of the SOI to be proximate to a device region. The relaxed silicon germanium region generates defects to getter impurities from the device region. Other aspects are provided herein.