| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method and an etching device capable of performing high-speed and uniform etching by reducing etching residue due to sputtering of a high-frequency electrode. <P>SOLUTION: In the etching method and the device, a substrate placing electrode for holding a substrate, and a high-frequency electrode provided with a gas plate having a number of gas nozzles, are arranged in vacuum chamber; plasma of a reaction gas jetted from the high-frequency electrode toward the substrate like a shower is generated; and a predetermined bias voltage is applied to the substrate to etch the surface of the substrate. In this method and the device, a point cusp magnetic field which has parallel magnetic field strength of 30 mT on the surface of the high-frequency electrode is formed to generate the plasma, and a self-bias potential of the high-frequency electrode is set at 60 V or less. Also, the magnet is moved in a direction perpendicular to the high-frequency electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
