| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a fuse region will not act as a barrier on arrangements of wiring in an LSI and on designing of an LSI pattern by preventing damages from being extended to the wiring layers located in a lower layer in the LSI when irradiating a laser beam on metal fuses to blow them. SOLUTION: The semiconductor device comprises the metal fuses 11 formed in the fuse region formed above the element isolation region of a semiconductor substrate, and the polysilicon wiring 16 which are located in a lower layer than the metal fuses and are arranged along the sides of the metal fuses when viewed in top view and which are hardly blown by laser light which is irradiated to bow the metal fuses. COPYRIGHT: (C)2005,JPO&NCIPI |
