发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, ELECTRONIC EQUIPMENT, AND METHOD OF CONTROLLING BACK-GATE POTENTIAL OF TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To further reduce the power consumption of a semiconductor integrated circuit and make a faster transition from a standby state to an operating state of the circuit. SOLUTION: The semiconductor integrated circuit comprises a plurality of circuit blocks (20-1, 20-2, ... 20-M) which make a transition from the operating state to the standby state or from the standby state to the operating state, and a master unit (10) which controls a back-gate potential of a transistor in an event-driven manner. The transistor forms the logic elements of the circuit blocks (20-1, 20-2, ... 20-M) based on a finite state machine for previously determining transitions of the states of the plurality of circuit blocks (20-1, 20-2, ... 20-M). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004336010(A) 申请公布日期 2004.11.25
申请号 JP20040044584 申请日期 2004.02.20
申请人 SEIKO EPSON CORP 发明人 KARAKI NOBUO
分类号 H01L21/822;G11C7/20;H01L21/336;H01L21/8238;H01L27/04;H01L27/08;H01L27/092;H01L29/786;H03K19/00;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L21/822
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