SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize easily stable performance and high yield of semiconductor integrated circuit which mounts insulated gate transistors of a high voltage system and a low voltage system. SOLUTION: In the semiconductor integrated circuit device, low voltage system insulated gate version transistors C, D, and high voltage system insulated gate version transistors A, B of a high voltage system are mounted on a semiconductor substrate 1. A second conductive semiconductor layer 21 is formed on the first conductive semiconductor substrate 1. A first conductive semiconductor layer 23 is formed on the second conductive semiconductor layer 21. A second conductive padding diffusion layer 22 is formed in a part over the second conductive semiconductor layer 21 and the first conductive semiconductor layer 23 in a region where at least a first conductive high voltage system insulated gate version transistor B is formed. COPYRIGHT: (C)2005,JPO&NCIPI