发明名称 |
CLEANING COMPOSITION AND METHOD OF WASHING A SILICON WAFER |
摘要 |
The cleaning composition has a first acid for removing copper from the silicon wafer surface, an oxidizing agent for oxidizing the silicon wafer surface to form an oxide thin film and for oxidizing barrier residues on the bevel edges, a second acid for removing the oxide thin film, and deionized (DI) water. The method involves applying the cleaning composition to the silicon wafer surface for a process time, and spin-drying the silicon wafer surface. This removes all residues from the backside surface and the bevel edges of a silicon wafer.
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申请公布号 |
US2004235306(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040710452 |
申请日期 |
2004.07.13 |
申请人 |
YANG JENG-WEI;LO TSE-YUAN |
发明人 |
YANG JENG-WEI;LO TSE-YUAN |
分类号 |
C11D3/39;C11D7/08;C11D11/00;H01L21/302;H01L21/306;H01L21/3213;H01L21/44;H01L21/461;H01L21/465;(IPC1-7):H01L21/44 |
主分类号 |
C11D3/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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