| 摘要 |
PROBLEM TO BE SOLVED: To provide such a technology that the data stored in a page address buffer can be outputted directly without accessing a memory cell in particular when a page address is accessed, in a nonvolatile ferroelectric memory and its control device. SOLUTION: In this technology, a block page address region and a column page address region are arranged at the least significant bit, a row address region is arranged at the most significant bit, and the reliability of a cell can be improved and power consumption can be reduced by preventing cell operations when the page address buffer is accessed. COPYRIGHT: (C)2005,JPO&NCIPI
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