| 发明名称 |
Manufacturing method for a silicon substrate having strained layer |
| 摘要 |
A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 mum or more between the plurality of atomic steps and forming a SiGe layer or a SiGe layer and a Si layer on the silicon substrate.
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| 申请公布号 |
US2004235274(A1) |
申请公布日期 |
2004.11.25 |
| 申请号 |
US20040847305 |
申请日期 |
2004.05.18 |
| 申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
KURITA HISATSUGU;IGARASHI MASATO;SENDA TAKESHI;IZUNOME KOJI |
| 分类号 |
C30B23/02;C30B25/02;C30B25/18;H01L21/20;H01L21/205;H01L21/324;H01L29/10;(IPC1-7):H01L21/336;C30B1/00;H01L21/36 |
主分类号 |
C30B23/02 |
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