| 摘要 |
A semiconductor device containing at least one transistor (14) and at least one heater resistor (18) in a heater resistor area adjacent the at least one transistor on a semiconductor substrate (22). The device includes a silicon substrate (22) containing contact openings for metal contacts (34) to the at least one transistor. A barrier layer (42) is in the contact openings and in the heater resistor area and provides a diffusion barrier/heater resistor layer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, Ta(Nx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi(Nx, Oy). A conductive layer (44) is adjacent at least a portion of the barrier layer for providing connection between a power source and the at least one heater resistor and at least one transistor. The semiconductor device is devoid of a patterned and etched barrier layer in the heater resistor area.
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