| 发明名称 |
PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE |
| 摘要 |
PROBLEM TO BE SOLVED: To form an SON (Silicon On Insulator) structure with high controllability. SOLUTION: An opening 302 is formed in a silicon substrate 301, and a sidewall oxide film 305 is formed. A sidewall epitaxial growth layer 307 is grown on the sidewall in the opening and planarized by polishing thus forming a local SON structure having a cavity 311. COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2004335833(A) |
申请公布日期 |
2004.11.25 |
| 申请号 |
JP20030131337 |
申请日期 |
2003.05.09 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KANZAWA YOSHIHIKO;SAITO TORU;IWANAGA JUNKO;KAWASHIMA TAKAHIRO;TAKAGI TAKESHI |
| 分类号 |
H01L21/76;H01L21/02;H01L21/205;H01L21/336;H01L21/764;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/76 |
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