| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of defects caused by an upper electrode in a ridge stripe type gallium nitride-based compound semiconductor laser. SOLUTION: The upper electrode has a three-layer structure. A first upper electrode (10) has a width which is not smaller than that of the upper surface of a ridge (70). A second upper electrode (20) has a width which is not smaller than that of the first upper electrode (10). A third upper electrode (30) has a width which is not smaller than that of the second upper electrode (20). Only the first and the second upper electrodes (10 and 20) reach a resonator end face. It is possible to reduce the thickness of the first and the second upper electrodes (10 and 20) while making the third upper electrode (30) thick enough to connect a wire. Thus, the turning-up of an upper electrode and the formation of burrs immediately over the resonator end face are suppressed, and current injection becomes perfect, thereby preventing the disconnection of an optical path and the short-circuit of a different conduction type layer are prevented. COPYRIGHT: (C)2005,JPO&NCIPI
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