| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing corrosion of a fuse and having high reliability, and a manufacturing method thereof. SOLUTION: A first NSG film (first insulating film) 31 by a high density plasma CVD method and a second NSG film (second insulating film) 32 by a plasma CVD method are laminated on an uppermost wiring layer 20 functioning as a fuse to form a first protective film 30, and then the surface of the protective film 30 is flattened by a CMP method. COPYRIGHT: (C)2005,JPO&NCIPI
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