| 摘要 |
PROBLEM TO BE SOLVED: To provide an aligner and a method for EUV exposure both of which can be put to practical use adequately even when a low-output EUV light source is used by improving the effective sensitivity of a resist applied to a wafer. SOLUTION: The aligner has a patterned-beam optical system 10 and a base-dose-beam optical system 50. The patterned-beam optical system 10 has an annular pattern exposure area 20. The base-dose-beam optical system 50 is composed of an ultraviolet lamp 51 and an optical system 53, and uniformly projects ultraviolet rays upon an area 60 on the wafer 11. The area 60 overlaps the pattern exposure area 20 of the patterned-beam optical system 10. The luminous exposure A of the optical system 10 is detected by means of an EUV light quantity detector 55, and the luminous exposure B of the base-dose-beam optical system 50 is detected by means of an ultraviolet-ray quantity detector 57. The intensity ratio between the luminous exposures A and B of the optical systems 10 and 50 can be optimized by adjusting the luminous exposures A and B. COPYRIGHT: (C)2005,JPO&NCIPI
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