发明名称 |
Photoelectric transducer and its manufacturing method |
摘要 |
A photoelectric transducer comprises an electrode (5) on which a semiconductor layer (7) carrying a sensitizing dye is deposited. The semiconductor layer (7) contains semiconductor particles and a binder and has a porosity of 40 to 80%. A method for manufacturing a photoelectric transducer by applying a solution containing semiconductor particles and a binder to an electrode (5), drying the electrode, and pressing the electrode under a pressure of 20 to 200 Mpa so as to form a semiconductor layer (7) is also disclosed. By the method, a photoelectric transducer comprising a semiconductor layer where a conduction path of photo-excited electrons is ensured without sintering the semiconductor layer at a high temperature and which has an adhesive power adaptable to the flexibility of the base and exhibiting excellent photoelectric transducing characteristics can be provided.
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申请公布号 |
US2004232506(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040489793 |
申请日期 |
2004.03.16 |
申请人 |
KOJIMA KATSUNORI;MIYATA TERUHISA |
发明人 |
KOJIMA KATSUNORI;MIYATA TERUHISA |
分类号 |
H01G9/20;H01M14/00;(IPC1-7):H01L31/00 |
主分类号 |
H01G9/20 |
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地址 |
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