| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the melted pattern destruction of a via chain caused by accumulation of charged particles and can diagnose a nonconduction failure location. SOLUTION: An electrode pad 1 not providing an external potential is connected to an upper wiring layer 2, and the upper wiring layer 2 is connected to a lower wiring layer 5 through a via 4. The lower wiring layer 5 is connected to another upper wiring layer 2 through the via 4. The upper and lower wiring layers 2 and 5 are connected by the via 4 to form a chain or a via chain structure. The lower layer of the electrode pad 1 not providing an external potential is provided with a pn junction. The pn junction is formed by an n-type semiconductor layer 9 formed on a semiconductor substrate 7 and a p-type semiconductor layer 10 laminated on the n-type semiconductor layer. The p-type semiconductor layer 10 is electrically connected to the electrode pad 1 through a via 11. COPYRIGHT: (C)2005,JPO&NCIPI
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