| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which solves problems in a technique for improving performance proper to microphotofabrication using far ultraviolet light, particularly ArF excimer laser light, to specifically provide a positive resist composition having small mask coverage dependence, high post-coating delay stability (PCD) and high post-exposure delay stability (PED), and to further provide a positive resist composition excellent also in process margin. <P>SOLUTION: The positive resist composition comprises (A) resin containing a repeating unit derived from isosorbide (meth)acrylate and having a solubility rate in an alkali developing solution increased by the action of an acid, (B) an aromatic-group-free sulfonium salt compound which generates an acid upon irradiation with an actinic ray or radiation, and (C) a solvent. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
