| 摘要 |
PROBLEM TO BE SOLVED: To form wide insulating regions into a desired pattern on the surface region of a semiconductor substrate. SOLUTION: A plurality of trenches 2 are bored in the surface of the semiconductor substrate 1 so deep as to be each 1.2 times or above as large in volume as the semiconductor 11 sandwiched between the trenches 2. An oxide film is formed on the sides and bottoms of the trenches 2 while the semiconductor substrate 1 is heated, and the semiconductor part 11 sandwiched between the adjacent trenches 2 is oxidized. When a groove is left at the center of each trench 2 by the above thermal oxidation, the grooves are filled up with the insulating film 4. The plane pattern of the trenches 2 is stripe-shaped, rectangular cell-shaped, lattice-shaped or many-forked. The trench 2 is as deep as 5μm or above, and the insulating region 5 formed after thermal oxidation is as wide as 5μm or above. COPYRIGHT: (C)2005,JPO&NCIPI
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