发明名称 VERTICAL ORGANIC TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To inexpensively provide a vertical organic transistor that is improved in current density and operational speed and can be mass-produced with high reproducibility. SOLUTION: This vertical organic transistor 10 has a first electrode 2, a first organic semiconductor layer 4, a comb-shaped or meshed second electrode 5, a second organic semiconductor layer 6, and a third electrode 7 successively formed on a substrate 1 in this order. This transistor 10 also has an electric charge injection layer and/or an electric charge transfer layer 3 between the first electrode 2 and the first organic semiconductor layer 4. The electric charge injection layer is constituted of an organic semiconductor material such as the m-MTDATA, CuPc, PEDOT, PSS, etc., each having an electric charge injecting property. In addition, the electric charge transfer layer 3 is constituted of the other organic semiconductor material such as theα-NPD, TPD, Spiro-TAD, etc., each having an electric charge transferring property. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004335557(A) 申请公布日期 2004.11.25
申请号 JP20030125877 申请日期 2003.04.30
申请人 RICOH CO LTD 发明人 IECHI HIROYUKI
分类号 H01L51/50;H01L21/28;H01L29/80;H05B33/14;(IPC1-7):H01L29/80 主分类号 H01L51/50
代理机构 代理人
主权项
地址