| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a contact hole can be formed easily, surely and efficiently, and to provide a semiconductor device. SOLUTION: A removal region 7A for passing a first contact hole H1 connecting a gate electrode 3, a source electrode and a drain electrode of an MOS transistor T with a wiring layer 9 is formed to a hydrogen barrier film 7, and the first contact hole H1 is formed inside the removal region 7A. COPYRIGHT: (C)2005,JPO&NCIPI
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