| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge waveguide semiconductor laser that is high in reliability and can operate at a high speed at a high temperature. SOLUTION: This ridge waveguide semiconductor laser is provided with an active layer 4, semiconductor layers 5 and 6 formed on the active layer 4 and each having a ridge-like waveguide 10, and an insulating film 9 formed on the semiconductor layer 6. The semiconductor laser is also provided with a first electrode layer 12 which is brought into contact with the semiconductor layer 6 through an opening 11 formed in the insulating film 9 and a striped second electrode layer 13 formed on the first electrode layer 12 along the direction of the waveguide 10. The semiconductor laser is constituted so that the distance R<SB>1</SB>from the end face 16 of a resonator to the end of the second electrode layer 13 becomes≤20μm. The semiconductor laser can be further provided with an electrode lead-out line led out from the second electrode layer 13, and a bonding pad 15 which is installed to the electrode lead-out line and positioned on the insulating film 9. COPYRIGHT: (C)2005,JPO&NCIPI
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