发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
Salient electrodes on a semiconductor chip and leads on a film substrate are to be connected together with a high accuracy. A change in lead pitch which occurs at the time of connecting salient electrodes on a semiconductor chip and inner leads on a film substrate with each other is taken into account and a correction is made beforehand to the pitch of the inner leads. Likewise, a change in lead pitch which occurs at the time of connecting electrodes on a liquid crystal substrate and outer leads on the film substrate with each other is taken into account and a correction is made beforehand to the pitch of the outer leads.
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申请公布号 |
US7262083(B2) |
申请公布日期 |
2007.08.28 |
申请号 |
US20040754545 |
申请日期 |
2004.01.12 |
申请人 |
HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
TOJO SHINJI;KANAMITSU SHINYA;ICHIHARA SEIICHI |
分类号 |
H01L21/00;H01L21/56;H01L21/60;H01L23/498 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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