发明名称 Method of manufacturing a semiconductor device
摘要 Salient electrodes on a semiconductor chip and leads on a film substrate are to be connected together with a high accuracy. A change in lead pitch which occurs at the time of connecting salient electrodes on a semiconductor chip and inner leads on a film substrate with each other is taken into account and a correction is made beforehand to the pitch of the inner leads. Likewise, a change in lead pitch which occurs at the time of connecting electrodes on a liquid crystal substrate and outer leads on the film substrate with each other is taken into account and a correction is made beforehand to the pitch of the outer leads.
申请公布号 US7262083(B2) 申请公布日期 2007.08.28
申请号 US20040754545 申请日期 2004.01.12
申请人 HITACHI ULSI SYSTEMS CO., LTD. 发明人 TOJO SHINJI;KANAMITSU SHINYA;ICHIHARA SEIICHI
分类号 H01L21/00;H01L21/56;H01L21/60;H01L23/498 主分类号 H01L21/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利