| 摘要 |
It is an object to obtain a method of manufacturing a semiconductor device having a capacitor capable of avoiding generation of a leakage current and an electrical short circuit between electrodes which are caused by a sharp portion of a lower electrode of the capacitor and a deterioration in a crystallinity of a dielectric film of the capacitor which is caused by a residue. A surface of a ruthenium film (7) is oxidized by a low temperature plasma oxidation process to form a ruthenium oxide film (9). Also in the case in which a part of a residue (51) exists on the surface of the ruthenium film (7), the existing residue (51) is lifted off and disappears by formation of the ruthenium oxide film (9) containing RuO4 having a high vapor pressure in a large amount. The low temperature plasma oxidation process, moreover, has an anisotropy an oxidation rate in a vertical direction is higher than that in a transverse direction. Accordingly, an upper end of a side wall portion of the ruthenium film (7) is greatly oxidized in the vertical direction and is thus rounded. As a result, a sharp portion (50) disappears.
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