发明名称 |
HAFNIUM NITRIDE BUFFER LAYERS FOR GROWTH OF GAN ON SILICON |
摘要 |
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 µm. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained. |
申请公布号 |
WO2004042783(A3) |
申请公布日期 |
2004.11.25 |
申请号 |
WO2003US15276 |
申请日期 |
2003.05.16 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
ARMITAGE, ROBERT, D.;WEBER, EICKE, R. |
分类号 |
C30B23/02;H01L21/20 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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