| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof, an electrooptic apparatus and a manufacturing method thereof, and an electronic apparatus capable of avoiding part of interlayer insulating films in the vicinity of the boundary face from being hollowed out in the case of forming a contact hole penetrated through the interlayer insulating films of at least two layers or over. SOLUTION: In the case of the presence of the contact hole penetrated through the interlayer insulating films 41, 12 of at least two layers or over whose film quality differs from each other, an etching rate by dry etching of the upper layer interlayer insulating film 41 is selected faster than that of the lower layer interlayer insulating film 12. COPYRIGHT: (C)2005,JPO&NCIPI |
