| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an electrode for a semiconductor device by which the possibility of short-circuiting with a wire or the like electrically connected to a semiconductor element can be solved and the electrode for the semiconductor device can be manufactured easily. SOLUTION: When the electrode 16 for the semiconductor device mounted on a substrate 10, on which the semiconductor element 12 is loaded, and to which the other tip of the wire 18, in which one tip is connected to the electrode for the element 12, is connected, is manufactured, a silicon piece as a main body forming the electrode 16 for the semiconductor device is dipped in an electroless nickel plating bath, a nickel layer is formed on the whole surface of the silicon piece by an electroless plating, and a gold layer is formed by an electroless gold plating so as to coat the nickel layer. COPYRIGHT: (C)2005,JPO&NCIPI |
