Memory device having a P+ gate and thin bottom oxide and method of erasing same

摘要

A non-volatile memory device includes a semiconductor substrate and an N-type source and drain within the substrate. An oxide-nitride-oxide (ONO) stack is formed over the substrate. The ONO stack includes a thin bottom oxide layer. A P<+> polysilicon gate electrode is formed over the ONO stack. The memory device is operative to perform a channel erase operation in which a pair of charge storing cells within the nitride layer are erased simultaneously.