发明名称 Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
摘要 A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet lube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reaction space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.
申请公布号 US2004231799(A1) 申请公布日期 2004.11.25
申请号 US20040486311 申请日期 2004.02.06
申请人 发明人 LEE CHUN SOO;OH MIN SUB;PARK HYUNG SANG
分类号 C23C16/455;C23C16/44;C23C16/509;H01J37/32;(IPC1-7):H01L21/44;C23F1/00 主分类号 C23C16/455
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