Field effect transistor has first, second constriction regions connected in parallel with respect to source, drain electrodes, gate electrode arranged above first, second constriction channel regions

摘要

The device has a semiconducting substrate (402) with a source region, a drain region and a channel region, whereby the source and drain regions are connected to source (404) and drain (406) electrodes, the channel region has first and second constriction regions connected in parallel with respect to the source and drain electrodes and a gate electrode (408) arranged above the first and second constriction channel regions.