MANUFACTURING METHOD OF COATED FABRIC FOR SEMICONDUCTOR CLEAN GARMENTS HAVING EXCELLENT MOISTURE TRANSPIRATION, DUST PROOFING PROPERTY, WEARING EFFECT AND FILTERING EFFECT

摘要

PURPOSE: A manufacturing method of coated fabric for semiconductor clean garments having moisture transpiration, dust proofing property, wearing effect and filtering effect is characterized by using high density fabric treated with antistatic resin, coating the high density fabric with nonporous type polyurethane resin by using a dry type direct method and having a simple process. CONSTITUTION: Coated fabric for semiconductor clean garments is obtained by the steps of: preparing a coating solution comprised of 45-90pts.wt. of polyester and polyether type nonporous type polyurethane resin comprised of self-crosslink type resin, 6-40pts.wt. of white pigment having 0.5-7μm of particle size, 4-15pts.wt. of methyl ethyl ketone and 4-15pts.wt. of toluene; coating a top layer of antistatic fabric with the coating soltuion with a dry type float knife coating method or an air knife coating method; drying the fabric at 100-140deg.C; and then hardening the fabric at 130-190deg.C. On the dry type float knife coating method or the air knife coating method, thickness of a knife is 0.2-1.0mm and equipment velocity is 30-60m/minute. The coated fabric has 2-10g/m¬2 of coating quantity(a dry state), 8-30μm of thickness, 0.1-0.6cc/cm¬2/sec. of air permeability, at least 8000/m¬2,24hrs. of moisture transpiration and 10-30g/m¬2 of coating quantity(a wet state).