| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a photovoltaic element having a further high performance at a low cost. <P>SOLUTION: The photovoltaic element is proviced with a first pin junction with its i-type semiconductor layer composed of an amorphous silicon on a substrate, and a second pin junction with its i-type semiconductor layer including a crystalline silicon, arranged in series. A p/i interface of the first pin junction has a first intermediate layer, an n/i interface has a second intermediate layer, a p/i interface of the second pin junction has a third intermediate layer, an n/i interface has a fourth intermediate layers, and the second and the third intermediate layers comprise an amorphous silicon. The first and the fourth intermediate layers have the crystalline silicon, or the second and the third intermediate layers include the crystalline silicon, and the first and the fourth intermediate layers comprise the amorphous silicon. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
