发明名称 METHOD OF FABRICATING PLURALITY OF SEMICONDUCTOR CHIPS AND ELECTRONIC SEMICONDUCTOR BASEBOARD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of fabricating a multitude of semiconductor chips of high quality achieving an improved yield. <P>SOLUTION: The method comprises steps of: forming on a baseboard 1 a mask layer 3 having a plurality of windows opened to the baseboard 1; growing a semiconductor material 5 on the baseboard such that the semiconductor material is grown starting from on the windows so as to make excess growth, merge in the midway between neighboring windows beyond the mask layer and form merge regions 8 there; growing arrays of element layers on the semiconductor material; and separating the combination made up of the baseboard, the mask layer, the semiconductor material and the arrays of element layers into individual semiconductor chips along the merge regions. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004336040(A) 申请公布日期 2004.11.25
申请号 JP20040134157 申请日期 2004.04.28
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 HAHN BERTHOLD;HAERLE VOLKER
分类号 H01L21/20;H01L21/205;H01L33/00 主分类号 H01L21/20
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