| 摘要 |
PROBLEM TO BE SOLVED: To remove an organic body, left between fine patterns of nm order formed on a substrate, more speedily and securely than before. SOLUTION: A silicon substrate 101 is accomodated in a given high-pressure container, which is filled with 2-propanol to dip the silicon substrate 101 in the 2-propanol liquid 104. Then the temperature in the high-pressure container is raised up to 235°C to place in the 2-propanol charged in the high-pressure container in a supercritical state, thereby immersing the silicon substrate 10 in a supercritical solvent 105 wherein the 2-propanol is in the supercritical state. COPYRIGHT: (C)2005,JPO&NCIPI |
