发明名称 Semiconductor device
摘要 The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
申请公布号 US2004232485(A1) 申请公布日期 2004.11.25
申请号 US20040870921 申请日期 2004.06.21
申请人 RENESAS TECHNOLOGY CORP. 发明人 AKAMINE HITOSHI;SUZUKI MASASHI;YAMANE MASAO;ADACHI TETSUAKI
分类号 H01L25/18;H01L21/822;H01L23/482;H01L25/04;H01L27/04;H01L27/088;H01L29/417;H01L29/423;H01L29/78;H03F3/24;H03F3/60;(IPC1-7):H01L29/94 主分类号 H01L25/18
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