发明名称 |
Circuit arrangement and method for setting a voltage supply for a read/write amplifier of an integrated memory |
摘要 |
A circuit arrangement for setting a voltage supply for a read/write amplifier of an integrated memory has a first voltage generator circuit for generating a supply voltage for application to the read/write amplifier during an assessment and amplification operation and a second voltage generator circuit for generating a precharge voltage for precharging bit lines of the memory which are connected to the read/write amplifier. A temperature detector circuit, which is connected to the first voltage generator circuit, is used to detect a temperature of the memory and interacts with the first voltage generator circuit to set the supply voltage applied to the read/write amplifier in a manner depending on a temperature of the memory.
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申请公布号 |
US2004233737(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040841546 |
申请日期 |
2004.05.10 |
申请人 |
BENZINGER HERBERT;ZANDEN KOEN VAN DER;SCHRODER STEPHAN;PROLL MANFRED |
发明人 |
BENZINGER HERBERT;ZANDEN KOEN VAN DER;SCHRODER STEPHAN;PROLL MANFRED |
分类号 |
G11C5/14;G11C7/04;G11C7/06;G11C7/12;G11C11/34;G11C11/4074;G11C11/409;G11C11/4091;(IPC1-7):G11C11/34 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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